Structure and Photoluminescence of InGaAs Quantum Dots Formed on an InAlAs Wetting Layer

Chin. Phys. Lett.

2001, Vol. 18

Issue (10): 1411-1414 DOI:

Original Articles

Structure and Photoluminescence of InGaAs Quantum Dots Formed on an InAlAs Wetting Layer

ZHANG Yuan-Chang¹;HUANG Chang-Jun²;YE Xiao-Ling¹;XU Bo¹;DING Ding¹;WANG Ji-Zheng¹;LI Yue-Fa¹;LIU Feng-Qi¹;WANG Zhan-Guo¹

¹Laboratory of Semiconductor Materials Science, Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083 ²State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083

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ZHANG Yuan-Chang, HUANG Chang-Jun, YE Xiao-Ling et al 2001 Chin. Phys. Lett. 18 1411-1414

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Abstract We have developed a new self-assembled quantum dot system where InGaAs dots are formed on an InAlAs wetting layer and embedded in the GaAs matrix. The structure is realized by special sample designation and demonstrated by low-temperature photoluminescence measurements. In contrast to the traditional InAs/GaAs quantum dots dominated by the ensemble effect, the temperature dependence of photoluminescence of such a quantum dot structure behaves as decoupled quantum dots. This can be attributed to the enhanced potential confinement for the dots provided by a higher-energy barrier in the wetting layer.

Keywords: 78.66.Fd 81.07.Ta 81.05.Ea

Published: 01 October 2001

PACS:	78.66.Fd	(III-V semiconductors)
	81.07.Ta	(Quantum dots)
	81.05.Ea	(III-V semiconductors)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y2001/V18/I10/01411

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	ZHANG Yuan-Chang
	HUANG Chang-Jun
	YE Xiao-Ling
	XU Bo
	DING Ding
	WANG Ji-Zheng
	LI Yue-Fa
	LIU Feng-Qi
	WANG Zhan-Guo

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