Growth of a-Plane GaN Films on r-Plane Sapphire Substrates by Metalorganic Chemical Vapour Deposition

Chin. Phys. Lett.

2004, Vol. 21

Issue (5): 970-971 DOI:

Original Articles

Growth of a-Plane GaN Films on r-Plane Sapphire Substrates by Metalorganic Chemical Vapour Deposition

LI Dong-Sheng;CHEN Hong;YU Hong-Bo;ZHENG Xin-He;HUANG Qi;ZHOU Jun-Ming

State Key Laboratory for Surface Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080

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LI Dong-Sheng, CHEN Hong, YU Hong-Bo et al 2004 Chin. Phys. Lett. 21 970-971

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Abstract Nonpolar a-plane GaN films were grown on r-plane sapphire substrates by metalorganic chemical vapour deposition (MOCVD) under various conditions. The surface morphologies of epitaxial films are studied by atomic force microscopy. The pit density and size both decrease with the increasing growth temperature, decreasing growth pressure or V/III ratio, while the roughness of the surface increases. Formation mechanisms of the pits in the films are discussed.

Keywords: 81.15.Gh 68.37.Ps

Published: 01 May 2004

PACS:	81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
	68.37.Ps	(Atomic force microscopy (AFM))

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y2004/V21/I5/0970

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	LI Dong-Sheng
	CHEN Hong
	YU Hong-Bo
	ZHENG Xin-He
	HUANG Qi
	ZHOU Jun-Ming

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