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Effects of Heat Treatment on Luminescence of Er-Doped Silicon-Rich SiO2 Prepared by rf Co-sputtering |
| ZHANG Chang-Sheng;XIAO Hai-Bo;CHEN Zhi-Jun;CHENG Xin-Li;ZHANG Feng |
| Ion Beam Laboratory, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 |
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| Cite this article: |
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ZHANG Chang-Sheng, XIAO Hai-Bo, CHEN Zhi-Jun et al 2004 Chin. Phys. Lett. 21 1333-1336 |
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Abstract Er-doped silicon-rich SiO2 thin films were prepared by an rf co-sputtering method, followed by thermal annealing at 700-1200°C for 30 min. The microstructure is studied by transmission electron microscopy (TEM) and x-ray diffraction (XRD). When the films are annealed at T > 900°C, silicon nanocrystals (nc-Si) enveloped by amorphous silicon (α-Si) can be observed. The thermal quenching behaviour at γ = 1.535 μm and its relation with the annealing temperature are also investigated. With the increasing annealing temperature, the portion of α-Si and the intensity quenching both decrease. Efficient luminescence from Er ions and weak intensity thermal quenching can be obtained from the sample annealed at 1100°C. The role of α-Si in the non-radiative processes at T > 100 K is discussed.
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| Keywords:
73.63.Bd
78.55.Hx
85.12.Cd
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Published: 01 July 2004
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