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Determination of Quasi Fermi-Level Separation of Semiconductor Lasers from Amplified Spontaneous Emission |
| WU Lin-Zhang;TIAN Wei;GAO Feng |
| Department of Electronic Information and Engineering, Wuhan University of Science and Engineering, Wuhan 430073 |
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| Cite this article: |
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WU Lin-Zhang, TIAN Wei, GAO Feng 2004 Chin. Phys. Lett. 21 1359-1361 |
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Abstract For characterization of semiconductor lasers, quasi-Fermi-level separation is a critical parameter due to its relationship with carrier density and gain. We suggest a new technique to determine the quasi-Fermi-level separation from amplified spontaneous emission measured from one facet.
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| Keywords:
78.55.-m
78.60.-b
42.55.Px
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Published: 01 July 2004
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| PACS: |
78.55.-m
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(Photoluminescence, properties and materials)
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78.60.-b
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(Other luminescence and radiative recombination)
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42.55.Px
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(Semiconductor lasers; laser diodes)
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