| Original Articles |
|
|
|
|
Nanostructuring of Si(100) by Normal-Incident Ar+ Ion Sputtering at Low Ion Flux |
| QI Le-Jun1;LI Wei-Qing1;YANG Xin-Ju2;FANG Ying-Cui1;LU Ming1 |
| 1Department of Optical Science and Engineering, and State Key Laboratory for Advanced Photonic Materials and Devices, Fudan University, Shanghai 200433
2Surface Physics Laboratory, Fudan University, Shanghai 200433 |
|
| Cite this article: |
|
QI Le-Jun, LI Wei-Qing, YANG Xin-Ju et al 2005 Chin. Phys. Lett. 22 431-434 |
|
|
|
Abstract We investigate Si(100) surface morphology evolution under normal-incident Ar+ ions sputtering with low ion flux of 20μA/cm2. The results indicate that under the low flux ion sputtering, the nanostructuring process of Si(100) is governed by the Ehrlich--Schwoebel (ES) mechanism, rather than by the Bradley--Harper (BH) one for the case of high flux (normally the order of 102 μA/cm2 or larger). This work reveals that the ion flux plays an important role in the surface morphology evolution under ion sputtering, and a usually accepted classification that the ES mechanism is related to metal single-crystals under ion sputtering, while the BH one is to amorphous, and semiconductor targets is questionable.
|
| Keywords:
68.49.Sf
68.37.Ps. 68.35.Bs
|
|
|
Published: 01 February 2005
|
|
|
|
|
|
|
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
