Strain Induced Insulator-Metal Transition in Single Wall Carbon Nanotubes

Chin. Phys. Lett.

2004, Vol. 21

Issue (4): 704-706 DOI:

Original Articles

Strain Induced Insulator-Metal Transition in Single Wall Carbon Nanotubes

DING Jian-Wen;YAN Xiao-Hong;LIU Chao-Ping;TANG Na-Si

Department of Physics, Xiangtan University, Xiangtan 411105

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DING Jian-Wen, YAN Xiao-Hong, LIU Chao-Ping et al 2004 Chin. Phys. Lett. 21 704-706

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Abstract In terms of a single-π orbital model, an analytical expression of the lowest-lying conduction-band and the highest-lying valence-band is derived for single wall carbon nanotubes under both the uniaxial and torsional strains. We observe not only semiconductor-metal transitions in primary metallic tubes, but also insulator-metal transitions in semiconducting tubes. Additionally, an indirect transition of electrons and a quantized electron-resonance have been expected in optical spectrum experiments of the nanotubes.

Keywords: 61.48.+c 62.25.+g 71.20.Tx

Published: 01 April 2004

PACS:	61.48.+c
	62.25.+g
	71.20.Tx	(Fullerenes and related materials; intercalation compounds)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y2004/V21/I4/0704

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	DING Jian-Wen
	YAN Xiao-Hong
	LIU Chao-Ping
	TANG Na-Si

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