| Original Articles |
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Passive Q-Switching Modelocked Yb3+-Doped Fibre Laser with GaAs Absorber Grown at Low Temperature |
| FENG Xiao-Ming1;WANG Yong-Gang1;LIU Yuan-Yuan1;LAN Yong-Sheng1;LIN Tao1;WANG Jun1;WANG Xiao-Wei1,FANG Gao-Zhan1;MA Xiao-Yu1;WANG Yong-Gang2;ZHANG Zhi-Gang2 |
| 1Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
2Ultrafast Laser Laboratory, School of Precision Instrument and Optoelectronics Engineering, Tianjin University, Tianjin 300072 |
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| Cite this article: |
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FENG Xiao-Ming, WANG Yong-Gang, LIU Yuan-Yuan et al 2005 Chin. Phys. Lett. 22 391-393 |
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Abstract GaAs absorber was grown at low temperature (550°C) by metal organic chemical vapour deposition (MOCVD) and was used as an output coupler with which we realized Q-switching modelocked Yb3+-doped fibre laser. The shortest period of the envelope of the Q-switched modelocking is about 3μs. The modelocking threshold is 4.27W and the highest average output pulse power is 290mW. The modelocking frequency is 12MHz.
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| Keywords:
42.81.Wg
42.65.Re
42.60.Fc
42.60.Gd
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Published: 01 February 2005
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| PACS: |
42.81.Wg
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(Other fiber-optical devices)
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42.65.Re
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(Ultrafast processes; optical pulse generation and pulse compression)
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42.60.Fc
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(Modulation, tuning, and mode locking)
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42.60.Gd
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(Q-switching)
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