Investigation into the Energy Band Diagram and Charge Distribution in  AlGaN/GaN Double Heterostructures by Self-Consistent Poisson--Schrödinger Calculations

Chin. Phys. Lett.

2005, Vol. 22

Issue (2): 454-456 DOI:

Original Articles

Investigation into the Energy Band Diagram and Charge Distribution in AlGaN/GaN Double Heterostructures by Self-Consistent Poisson--Schrödinger Calculations

JI Xiao-Li;CHEN Fan;JIANG Ruo-Lian;ZHOU Jian-Jun;WEN Bo;HAN Ping;XIE Zi-Li;ZHANG Rong;ZHENG You-Dou

Department of Physics and Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials Science and Technology, Nanjin University, Nanjing 210093

Cite this article:

JI Xiao-Li, CHEN Fan, JIANG Ruo-Lian et al 2005 Chin. Phys. Lett. 22 454-456

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Abstract The energy band diagram and charge distribution of the unintentional doped AlGaN/GaN/AlGaN/GaN double heterostructure were obtained by self-consistent Poisson--Schrödinger calculations. The severe band tilting and high two-dimensional electron gas (2DEG) density mainly attribute to the large internal polarization intensity, which is close to a linear function of Al composition. The influence of Al composition is investigated. The results show that band tilting enlarges and 2DEG gains with Al composition, and two-dimensional hole gas occurs when Al composition reaches a certain extent. The influence of Al composition and two-dimensional hole gas (2DHG) on devices is discussed.

Keywords: 73.20.At 71.20.Nr

Published: 01 February 2005

PACS:	73.20.At	(Surface states, band structure, electron density of states)
	71.20.Nr	(Semiconductor compounds)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y2005/V22/I2/0454

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	JI Xiao-Li
	CHEN Fan
	JIANG Ruo-Lian
	ZHOU Jian-Jun
	WEN Bo
	HAN Ping
	XIE Zi-Li
	ZHANG Rong
	ZHENG You-Dou

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