| Original Articles |
|
|
|
|
Photoluminescence of Dislocations in Nitrogen Doped Czochralski Silicon |
| LI Dong-Sheng1;YANG De-Ren1;E. Leoni2;S. Binetti2;S. Pizzini2 |
| 1State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027
2INFM and University of Milano Bicocca, Milan, Italy |
|
| Cite this article: |
|
LI Dong-Sheng, YANG De-Ren, E. Leoni et al 2004 Chin. Phys. Lett. 21 2242-2244 |
|
|
|
|
Abstract We investigate optical properties of dislocations in nitrogen-doped and nitrogen-free Czochralski silicon. The dislocations are formed during crystal growth, but not formed during deformation. The results show that in nitrogen-doped samples, a broad band replaced the D1 band of dislocation, regardless of dislocation density. The replacement of D1 band is caused by the non-irradiation combination induced by oxygen precipitation. Moreover, a new emission at 0.975eV is observed in both the nitrogen-free and doped samples when the dislocation density is lower than 104 cm-2.
|
| Keywords:
61.72.Tt
61.72.Lk
78.55.-m
|
|
|
Published: 01 November 2004
|
|
| PACS: |
61.72.Tt
|
|
| |
61.72.Lk
|
(Linear defects: dislocations, disclinations)
|
| |
78.55.-m
|
(Photoluminescence, properties and materials)
|
|
|
|
|
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
