Binding Energy of Biexcitons in GaAs Quantum-Well Wires

Chin. Phys. Lett.

2004, Vol. 21

Issue (11): 2259-2262 DOI:

Original Articles

Binding Energy of Biexcitons in GaAs Quantum-Well Wires

LIU Jian-Jun^1,2;CHEN Xiao-Fang¹;LI Shu-Shen¹

¹College of Physics, Hebei Normal University, Shijiazhuang 050016 ²National Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083

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LIU Jian-Jun, CHEN Xiao-Fang, LI Shu-Shen 2004 Chin. Phys. Lett. 21 2259-2262

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Abstract The binding energy of a biexciton in GaAs quantum-well wires is calculated variationally by use of a two-parameter trial wavefunction and a one-dimensional equivalent potential model. There is no artificial parameter added in our calculation. Our results agree fairly well with the previous results. It is found that the binding energies are closely correlative to the size of wire. The binding energy of biexcitons is smaller than that of neutral bound excitons in GaAs quantum-well wires when the dopant is located at the centre of the wires.

Keywords: 73.21.Hb 71.35.-y 71.55.Eq

Published: 01 November 2004

PACS:	73.21.Hb	(Quantum wires)
	71.35.-y	(Excitons and related phenomena)
	71.55.Eq	(III-V semiconductors)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y2004/V21/I11/02259

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