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Nano-crystalline CNx Films and Field Electron Emission Properties |
| HANG Lan1,3;MA Hui-Zhong1;LI Hui-Jun2;YANG Shi-E2;YAO Ning2;HU Huan-Ling3;ZHANG Bing-Lin2 |
| 1Department of Engineering Mechanics, Zhengzhou University, Zhengzhou 450002
2Department of Physics, Zhengzhou University, Zhengzhou 450052
3Anhui Optics and Fine Mechanics Institute, Chinese Academy of Sciences, Hefei 230031 |
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| Cite this article: |
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HANG Lan, MA Hui-Zhong, LI Hui-Jun et al 2003 Chin. Phys. Lett. 20 579-581 |
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Abstract CNx films with x ≈ 0.5 were prepared onto a titanium coated ceramic substrate by using microwave plasma enhanced chemical vapor deposition. As-deposited films were studied by x-ray photoelectron spectroscopy (XPS), x-ray diffraction, and scanning electron microscopy. The films consist of nano-crystalline grains with sites in a range of 20-40nm approximately. The interplanar distance (d-value) of the nano-crystalline structure determined from the peak position of x-ray diffraction was found to be 0.336 nm. This value is consistent with the d-value of graphite. XPS measurements of the N 1 s and C 1 s core levels for the same sample demonstrate two types of bonding structures between carbon and nitrogen atoms, corresponding to sp2 C-N and sp3 C-N. It is suggested that the N atoms mainly exist in aromatic rings of the nano-graphite layers by substituting carbon positions with nitrogen. Field electron emission characteristics of the film were tested. The turn-on field of the emission was as low as 1.1V/μm.
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| Keywords:
79.70.+q
81.15.Gh
73.40.Gk
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Published: 01 April 2003
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| PACS: |
79.70.+q
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(Field emission, ionization, evaporation, and desorption)
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81.15.Gh
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(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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73.40.Gk
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(Tunneling)
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