| Original Articles |
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Effect of Reactor Pressure on Qualities of GaN Layers Grown by Hydride Vapour Phase Epitaxy |
| QIU Kai1;YIN Zhi-Jun1;LI Xin-Hua1;ZHONG Fei1;JI Chang-Jian1;HAN Qi-Feng1;CAO Xian-Cun1;CHEN Jia-Rong1;LUO Xiang-Dong2;WANG Yu-Qi1 |
| 1Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 2300312Jiangsu Provincial Key Lab of ASIC Design, Nantong University, Nantong 226007 |
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| Cite this article: |
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QIU Kai, YIN Zhi-Jun, LI Xin-Hua et al 2007 Chin. Phys. Lett. 24 1390-1392 |
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Abstract The influence of reactor pressure on GaN layers grown by hydride vapour
phase epitaxy (HVPE) is investigated. By decreasing the reactor pressure from 0.7 to 0.5atm, the GaN layer growth mode changes from the island-like one to the step flow. The improvements in structural and optical properties and surface morphology of GaN layers are observed in the step flow growth mode. The results clearly indicate that the reactor pressure, similarly to the growth temperature, is one of the important parameters to influence the qualities of GaN epilayers grown by HVPE, due to the change of growth mode.
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| Keywords:
81.05.Ea
81.10.Kk
81.10.-h
81.15.Hi
81.70.Fy
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Received: 23 November 2006
Published: 23 April 2007
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| PACS: |
81.05.Ea
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(III-V semiconductors)
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81.10.Kk
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81.10.-h
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(Methods of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation)
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81.15.Hi
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(Molecular, atomic, ion, and chemical beam epitaxy)
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81.70.Fy
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(Nondestructive testing: optical methods)
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