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Chemical Oxidation of La2CuO4 Epitaxial Thin Films Grown by Pulsed Laser Deposition |
WANG Chun-Chang;YAN Yun-Jie;ZHU Jing |
Beijing National Center for Electron Microscopy, Tsinghua University, Beijing 100084Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084 |
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Cite this article: |
WANG Chun-Chang, YAN Yun-Jie, ZHU Jing 2007 Chin. Phys. Lett. 24 1674-1677 |
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Abstract Chemical oxidation is used to induce superconductivity in La2CuO4 expitaxial thin films fabricated by pulsed laser deposition technique. Details about the influence of oxidation time on structural, surface morphology, Raman spectra, and electrical properties have been investigated. The results convince that successful uptake of oxygen occurs in the oxidized films, and the content of the inserted oxygen increases with increasing oxidation interval. The possible mechanism for the excess oxygen insertion into the film is also discussed.
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Keywords:
68.55.Jk
74.78.Bz
82.40.-g
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Received: 23 January 2007
Published: 17 May 2007
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[1] Bednorz J G and M\"uller K A 1986 Z. Phys. B 64 189 [2] Tholence J L 1987 Physica B 148 353 [3] Jorgensen J D, Dabrowshi B, Pei S Y, Hinks D G, Soderholm L,Morosin B, Schirber J E, Venturini E L and Ginley D S 1994 Phys.Rev. B 38 1337 [4] Wells B O, Lee Y S, Kastner M A, Christianson R J, Birgeneau R J,Yamada K, Endoh Y and Shirane G 1997 Science 277 1067 [5] Beille J, Chevalier B, Demazeau G, Deslandes F, LeJay P and ProvostJ 1987 Physica B+C 146 307 [6] Wattiaux A, Park J C, Grenier J C and Pouchard M 1990 C. R.Acad. Sci. 310 1047 [7] Rudolf P and Sch?llhorn R 1992 J. Chem. Soc. Chem.Commun. 1992 158 [8] Takayama-Muromachi E, Sasaki T and Matsui Y1993 Physica C 207 97 [9] Locquet J P, Gerber C, Cretton A, Jaccard Y, Williams E J andM\"achler E 1993 Appl. Phys. A 57 211 [10] Locquet J P, Arrouy F, M\"achler E, Despont M, Bauer P and WilliamsE J 1996 Appl. Phys. Lett. 68 1999 [11] Lees S T, Gameson I, Jones M O, Edwards P P, Greaves C, WellhoferF, Woodall P, Langford I and Slaski M 1996 Physics C 270305 [12] Lees S T, Gameson I, Jones M O, Edwards P P and Slaski M 1998 Chem. Mater. 10 3146 [13] Lees S T, Edwards P P, Gameson I, Jones M O, Slaski M, Rial C,Amador U and Mor\'an E 1997 Adv. Mater. 9 823 [14] Wang C C, Cui M L, Zheng X and Zhu J 2004 Appl. Phys. A 78 1193 [15] Arrouy F, Locquet J P, Williams E J, M\"achler E, Berger R, GerberC, Monroux C, Grenier J C and Wattiaux A 1996 Phys. Rev. B 54 7512 [16] Ramesh R, Chang C C, Ravi T S, Hwang D M, Inam A, Xi X X, Li Q, WuX D and Venkatesan T 1990 Appl. Phys. Lett. 57 1064 [17] Wang C C, Wang H, Chen J and Zhu J 2004 Supercond. Sci.Technol. 17 1051 [18] Wang C C and Zhu J 2004 J. Phys. Chem. B 108 10997 [19] McCarty K F, Schirber J E, Cheong S W and Fisk Z 1991 Phys.Rev. B 43 7883 [20] Sugai S 1989 Phys. Rev. B 39 4306 [21] Lyons K B and Fleury P A 1988 J. Appl. Phys. 64 6075 [22] McCarty K F, Venturini E L, Ginley D S, Morosin B and Kwak J F1989 Physica C 159 603 [23] Lyons K B, Fleury P A, Schneemeyer L F and Waszczak J V 1988 Phys. Rev. Lett. 60 732 [24] Tu Q Y, Chen X L, Ma B K, Zhao Z X, Lan Y C and Liang J K 2002 Appl. Phys. A 74 79 [25] Locquet J P, Perret J, Fompeyrine J, M\"achler E, Seo J W andTendeloo G Van 1998 Nature 394 453 [26] Casa?Pastor N, Gomez-Romero P, Fuertes A and Navarro J M 1993 Solid State Ionics 63 938 [27] Casa\~n-Pastor N, Gomez-Romero P, Fuertes A, Navarro J M, Sanchis MJ and Ondo\~no S 1993 Physica C 216 478 [28] Fang Y H and Hor P H 2000 Physica C 341-348 565 [29] Li Z G, Hamed A, Zhu W J and Hor P H 2000 Physica C 341-348 567 [30] Seo J W, Fompeyrine J, Siegwart H and Locquet J P 2001 Phys. Rev. B 63 205401 |
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