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Physical mechanism of two-photon response in semi-insulating GaAs |
| LIU Xiu-Huan1;CHEN Zhan-Guo2;JIA Gang2;SHI Bao2 |
| 1State Key Laboratory on Integrated Optoelectronics, College of Communication Engineering, Jilin University, Changchun 1300122State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012 |
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| Cite this article: |
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LIU Xiu-Huan, CHEN Zhan-Guo, JIA Gang et al 2008 Chin. Phys. Lett. 25 125-128 |
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Abstract The physical mechanism of two-photon response (TPR) in semi-insulating GaAs is studied. The measured photocurrent generated from the fabricated hemispherical GaAs sample responding to 1.3μm continuous wave laser shows a quadratic dependence on the coupled optical power and no saturation with the bias. The angular dependence of the photocurrent on the azimuth is in agreement with the anisotropy of double-frequency absorption
(DFA) in GaAs single crystals. These results demonstrate DFA is the dominant mechanism of TPR in GaAs.
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| Keywords:
42.65.-k
72.40.+w
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Received: 09 February 2007
Published: 27 December 2007
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| PACS: |
42.65.-k
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(Nonlinear optics)
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72.40.+w
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(Photoconduction and photovoltaic effects)
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