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Optimum Indium Concentration for Growth of 1.3μmInAs/InxGa1-xAs Quantum Dots in a Well |
WANG Chong1,2;LIU Zhao-Lin2;CHEN Xue-Mei3;XIA Chang-Sheng2;ZHANG
Shu1;YANG Yu1;LU Wei2 |
| 1Research Institute of Engineering and Technology, Yunnan University, Kunming 6500912National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 2000833Research Center for Detectors, Kunming Institute of Physics, Kunming 650034 |
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| Cite this article: |
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WANG Chong, LIU Zhao-Lin, CHEN Xue-Mei et al 2007 Chin. Phys. Lett. 24 3260-3263 |
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Abstract Five InAs/InxGa1-xAs quantum dots in a well (DWELL) with different indium concentration x are grown by solid source molecular beam epitaxy. The high quantum dot density is observed in the InAs/In0.3Ga0.7As DWELL. The photoluminescence (PL) experiments indicate that the ground state peaks of
InAs/In0.15Ga0.85As and InAs/In0.22Ga0.78As DWELLs shift to 1.31 and 1.33μm, respectively. The optical properties are investigated by using the PL and piezoreflectance spectroscope methods. An abnormal blue shift has been observed with the further increase of x from 0.22 to 0.30.
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| Keywords:
78.66.Fd
78.55.Cr
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Received: 16 July 2007
Published: 23 October 2007
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