Chin. Phys. Lett.  2008, Vol. 25 Issue (2): 722-725    DOI:
Original Articles |
Conductance of a Quantum Dot in the Presence of a Phonon Field
ZHOU Ben-Liang1;LIAO Wen-Hu1;ZHOU Guang-Hui1,2
1Department of Physics, Hunan Normal University, Changsha 4100812International Center for Materials Physics, Chinese Academy of Sciences, Shenyang 110015
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ZHOU Ben-Liang, LIAO Wen-Hu, ZHOU Guang-Hui 2008 Chin. Phys. Lett. 25 722-725
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Abstract We theoretically investigate the electrical transport property of a quantum dot with longitudinal optical phonons. The conductance through the dot connected to two leads is calculated by the nonequilibrium Green function within the Landauer--Buttiker framework. The numerical examples of the
conductance with different electron--phonon coupling strengths show that the presence of a phonon field typically results in the suppression of the main peak accompanied by some phonon side peaks. Both the main peak and the side peaks are sensitive to the electron--phonon coupling strength, which is related to temperature. Our results for this system are consistent with some related previous works but the calculation is comparatively simple.
Keywords: 78.67.De      63.22.+m      63.20.Kr     
Received: 07 June 2007      Published: 30 January 2008
PACS:  78.67.De (Quantum wells)  
  63.22.+m  
  63.20.Kr  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y2008/V25/I2/0722
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ZHOU Ben-Liang
LIAO Wen-Hu
ZHOU Guang-Hui
[1] Lee P A 1992 Transport Phenomena in MesoscopicSystems (Berlin: Springer)
[2]Goldman V J, Tsui D C and Cunningham J E 1987 Phys.Rev. B 36 7635
[3]Sun Q F, Wang J and Lin T H 1998 Phys. Rev. B 58 13007
[4]Wingreen N S, Jacobsen K W and Wilkins J W 1989 Phys.Rev. B 40 11834
[5]Li S S, Chang K and Xia J B 2005 Phys. Rev. B 71 155301
[6]Li X, Chen H and Zhou S X 1995 Phys. Rev. B 5212202
[7]Anda E V and Flores F 1991 J. Phys.: Conden. Matt. 4 9087
[8]Davies J H, Hershfield S, Hyldgaard P and Wilkins J W 1993 Phys. Rev. B 47 4603
[9]Mohaidat J M, Shum K and Alfano R R 1993 Phys. Rev. B 48 8809
[10]Zou N Z and Chao K A 1992 Phys. Rev. Lett. 693224
[11]Chang Kai, Chan K S and Peeters F M 2005 Phys. Rev.B 71 155309
[12]Gnodtke C, Kie{\sslich G and Sch\"{oll E 2006 Phys.Rev. B 73 115338
[13Stauber T, Zimmermann R and Castella H 2000 Phys.Rev. B 62 7336
[14]Ueda Akiko and Eto Mikio 2006 Phys. Rev. B 73235353
[15]Vasilevskiy M I, Anda E V and Makler S S 2004 Phys.Rev. B 70 035318
[16]Climente Juan I, Bertohi Andrea, Goldoni Guido andMolinari Elisa 2006 Phys. Rev. B 74 035313
[17]Chen Zuo-Zi, L\"{u Rong and Zhu Bang-fen 2005 Phys.Rev. B 71 165324
[86]Datta S 1995 Electronic Transport in MesoscopicSystems (Cambridge: Cambridge University)
[19]Jauho A P, Wingreen N S and Meir Y 1994 Phys. Rev. B 50 5528
[20]Mahan G D 1990 Many-Particle Physics 2nd edn (NewYork: Plenum)
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