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Porous Structures and Short-Wavelength Photoluminescence of C+-Implanted SiO2 Films |
| ZHAO Jun1;MAO Dong-sheng1;DING Xing-zhao1;LIN Zi-xin1;JIANG Bing-yao1;YU Yue-hui1;YANG Gen-qing2;LIU Xiang-huai1;S. Jin;H. Bender3 |
| 1Ion Beam Laboratory,
2State Key Laboratory of Transducer Technology, Shanghai Institute of Metallurgy,Chinese Academy of Sciences, Shanghai 200050
3IMEC, Kapeldreef, B-3001 , Leuven, Belgium
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| Cite this article: |
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ZHAO Jun, MAO Dong-sheng, DING Xing-zhao et al 1999 Chin. Phys. Lett. 16 361-363 |
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Abstract C ions of three different energies were sequentially implanted into SiO2 films grown by plasma enhanced chemical vapor deposition. Microstructures of the samples were studied with transmission electron microscopy (TEM) and secondary ion mass spectroscopy As revealed by cross-sectional TEM, porous structures had been created in the implanted region during ion implantation. No photoluminescence (PL) was detected from the as-implanted samples. However, intense short-wavelength PL peaking at 360-370nm and ~ 450nm was observed from the annealed samples. The blue light from samples excited by an Xe lamp can be observed by naked eyes at room temperature. The light emission mechanisms are briefly discussed.
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61.72.Ww
61.80.Jh
78.55.-m
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Published: 01 May 1999
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