Chin. Phys. Lett.  2005, Vol. 22 Issue (7): 1800-1802    DOI:
Original Articles |
Growth of Large High-Quality Type-II a Diamond Crystals
WANG Xian-Cheng1;MA Hong-An1;ZANG Chuan-Yi1,2;TIAN Yu1;LI Shang-Sheng2;JIA Xiao-Peng1,2
1National Laboratory of Superhard Materials, Jilin University, Changchun 130012 2Henan Polytechnic University, Jiaozuo 454000
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WANG Xian-Cheng, MA Hong-An, ZANG Chuan-Yi et al  2005 Chin. Phys. Lett. 22 1800-1802
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Abstract Large high-quality type-II a diamond crystals in size of about 4.0mm have been grown under the condition of 5.5GPa and 1200--1300°C by using the temperature gradient method in a domestic cubic anvil high-pressure apparatus. The Fe55Co16Ni25 alloy (KOV) is used as the solvent metal, and Ti with the content 1.5wt.% of the solvent metal is selected as the nitrogen getter to reduce the impurity of nitrogen in the diamond crystal. To avoid the impurities and cave in the crystal, the growth rate of the initial stage of the growing process is controlled within 0.45mg/h and the ring carbon source of the size Ф8mm-Ф6mm×3mm is used to grow large diamond crystals.
Keywords: 81.05.Uw      81.10.Aj      81.10.Dn      81.10.-h     
Published: 01 July 2005
PACS:  81.05.Uw  
  81.10.Aj (Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation)  
  81.10.Dn (Growth from solutions)  
  81.10.-h (Methods of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation)  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y2005/V22/I7/01800
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WANG Xian-Cheng
MA Hong-An
ZANG Chuan-Yi
TIAN Yu
LI Shang-Sheng
JIA Xiao-Peng
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