Photoelectric Properties of Si-Si<suB>l-x</suB>Ge<suB>x</suB>-Ge Heterostructures for Infrared Detector

Chin. Phys. Lett.

1997, Vol. 14

Issue (11): 876-878 DOI:

Original Articles

Photoelectric Properties of Si-Si_l-xGe_x-Ge Heterostructures for Infrared Detector

JIANG Ruo-lian;JIANG Ning;GU Shu-lin;LI Zhao;XU Jun;ZHU Shun-ming;HU Li-qun;ZHENG You-dou

Department of Physics, Nanjing University, Nanjing 210093

Cite this article:

JIANG Ruo-lian, JIANG Ning, GU Shu-lin et al 1997 Chin. Phys. Lett. 14 876-878

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Abstract Si-Si_l-xGe_x-Ge heterostructures with Ge fraction graded linearly from 1 to 0 have been epitaxially grown on Ge substrates by rapid, thermal process/very low pressure-chemical vapor deposition. The peak value of the spectrum response for these structures ranges from 1.3 to 1.55 μm, which is just in accordance with the optical fiber communication window, and considered to be the superposition of the response in Si_l-xGe_x absorption region and the Ge absorption region. High detecting sensitivity, and low dark current have been achieved from the prototype SiGe ptype intrinsic n-type photodetectors made of these structures.

Keywords: 78.66.-w 85.60.Dw

Published: 01 November 1997

PACS:	78.66.-w	(Optical properties of specific thin films)
	85.60.Dw	(Photodiodes; phototransistors; photoresistors)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1997/V14/I11/0876

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	JIANG Ruo-lian
	JIANG Ning
	GU Shu-lin
	LI Zhao
	XU Jun
	ZHU Shun-ming
	HU Li-qun
	ZHENG You-dou

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