| Original Articles |
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SiGe Optical Waveguide Modulators Based on the Plasma Dispersion Effect |
| GAO Yong;LI Guo-zheng;LIU Xi-ding;LIU En-ke;ZHANG Xiang-jiu*;LU Xue-kun*;WANG Xun* |
| Department of Electronic Engineering, Xian Jiaotong University, Xian 710049
*National Key Laboratory of Surface Physics, Fudan University, Shanghai 200433 |
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| Cite this article: |
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GAO Yong, LI Guo-zheng, LIU Xi-ding et al 1996 Chin. Phys. Lett. 13 189-191 |
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Abstract Based on plasma dispersion of Si1-xGex, the single mode waveguide modulators consisting of Si1-xGex/Si and Si/ Si1-xGex/Si which were grown by molecular beam epitaxy have been fabricated. For Si1-xGex/Si structure, the switch current and insertion loss at wavelength 1.3 μm are 36 mA and 2.8 dB, respectively. The switching response time is 40 ns.
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| Keywords:
42.82.Et
78.20.Jq
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Published: 01 March 1996
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| PACS: |
42.82.Et
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(Waveguides, couplers, and arrays)
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78.20.Jq
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(Electro-optical effects)
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