Chin. Phys. Lett.  2006, Vol. 23 Issue (2): 426-427    DOI:
Original Articles |
Metallization of Cu3N Semiconductor under High Pressure
YANG Liu-Xiang;ZHAO Jing-Geng;YU Yong;LI Feng-Ying;YU Ri-Cheng;JIN Chang-Qing
Institute of Physics, Chinese Academy of Sciences, PO Box 603, Beijing 100080
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YANG Liu-Xiang, ZHAO Jing-Geng, YU Yong et al  2006 Chin. Phys. Lett. 23 426-427
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Abstract Using the four-probe method, we investigate the electrical conductivity of Cu3N under high pressure with the diamond anvil cell. Cu3N is a semiconductor at ambient pressure showing a band gap about 1eV. With the application of quasi-hydrostatic pressures, its resistance decreases dramatically over five orders of magnitude from ambient to 9GPa. The compound became a metal at pressure about 5.5GPa, which is in well agreement with the recent first principle calculation.
Keywords: 62.50.+p      71.30.+h      81.05.Je     
Published: 01 February 2006
PACS:  62.50.+p  
  71.30.+h (Metal-insulator transitions and other electronic transitions)  
  81.05.Je (Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides))  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y2006/V23/I2/0426
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YANG Liu-Xiang
ZHAO Jing-Geng
YU Yong
LI Feng-Ying
YU Ri-Cheng
JIN Chang-Qing
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