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Electrical Characteristics of Metal Contacts to Boron Doped
Polycrystalline Semiconducting Diamond Thin Films
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LIU Xing-zhao;YANG Bang-chao;JIA Yu-min;LI Yan-rong |
University of Electronic Science and Technology of China, Chengdu 610054 |
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Cite this article: |
LIU Xing-zhao, YANG Bang-chao, JIA Yu-min et al 1996 Chin. Phys. Lett. 13 541-544 |
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Abstract Low resistance ohmic contacts have been fabricated on chemical vapor deposition grown polycrystalline B doped semiconducting diamond thin films by thermally activated solid state reaction process. A bilayer metallization of Ti/Au was employed. After annealing at 820°C for 10min in Ar atmosphere, the specific contact resistance of 2 x 10-4 Ω.cm2 has been obtained. The properties of the diamond/Ti interfaces have been characterized by using x-rays diffraction and scanning electron microscopy. The performance of semiconducting diamond thin film thermistors has been reported.
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Keywords:
73.40.Ns
68.35. -p
73.40.Cg
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Published: 01 July 1996
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