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THE ELIMINATION OF In ISLANDS ON InP SURFACES AND ITS MECHANISM |
| JIN Xiao-feng;YU Ming-ren;WANG Xun |
| Modern Physics Institute, Fudan University, Shanghai |
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| Cite this article: |
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JIN Xiao-feng, YU Ming-ren, WANG Xun 1985 Chin. Phys. Lett. 2 345-348 |
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Abstract The surface indium islands originated by argon ion bombardment can be removed by evaporating phosphorous on InP surface followed by annealing. A possible mechanism of elimination of In islands is proposed based on the experimental ELS and XPS data.
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Published: 01 August 1985
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