Epitaxial Growth of High Quality Diamond Film on the Cubic Boron
Nitride Surface by Chemical Vapor Deposition

Chin. Phys. Lett.

1996, Vol. 13

Issue (10): 779-781 DOI:

Original Articles

Epitaxial Growth of High Quality Diamond Film on the Cubic Boron Nitride Surface by Chemical Vapor Deposition

GAO Chun-xiao;ZHANG Tie-chen;ZOU Guang-tian;JIN Zeng-sun;YANG Jie^*

National Laboratory of Superhard Materials, Jilin University, Changchun 130023 ^*Laboratory of Changchun Flying School, Changchun 130012

Cite this article:

GAO Chun-xiao, ZHANG Tie-chen, ZOU Guang-tian et al 1996 Chin. Phys. Lett. 13 779-781

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Abstract High quality diamond epitaxial film has been obtained on high pressure synthesized cubic boron nitride crystal surface by dc glow discharge chemical vapor deposition. The growth characteristics of the epitaxial film have been investigated by scanning electron microscope. The quality of the film has been confirmed by Raman spectroscope to be close to that of natural diamond.

Keywords: 68.55.Ce 81.15.Gh

Published: 01 October 1996

PACS:	68.55.Ce
	81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1996/V13/I10/0779

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	GAO Chun-xiao
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	YANG Jie

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