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Roles of Low Energy Electrons in the Fabrication Process Using Scanning Tunnelling Microscope |
| WANG Chen;BAI Chun-li;LI Xiao-dong1;SHANG Guang-yi;QIU Xiao-hui |
| Institute of Chemistry, Chinese Academy of Sciences, Beijing 100080
1Permanent address: Department of Materials Physics, University of Science and Technology Beijing, Beijing 100083
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| Cite this article: |
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WANG Chen, BAI Chun-li, LI Xiao-dong et al 1996 Chin. Phys. Lett. 13 750-752 |
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Abstract The effects of low energy electrons in scanning tunnelling microscope operations are explored, with the emphasis on its role in the fabrication processes. A simple model based on the continuum electron diffusion is proposed to account for the observed sub-surface characteristics of the nanoscale features. The results suggest that the local transport properties could affect the outcome of such operations.
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| Keywords:
61.16.Ch
73.25.+i
79.70.+q
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Published: 01 October 1996
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| PACS: |
61.16.Ch
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73.25.+i
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(Surface conductivity and carrier phenomena)
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79.70.+q
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(Field emission, ionization, evaporation, and desorption)
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