| Original Articles |
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Enhanced Spin Injection into ZnO Semiconductor Measured by Magnetoresistance |
| JI Gang;YAN Shi-Shen;CHEN Yan-Xue;LIU Guo-Lei;CAO Qiang;MEI Liang-Mo |
| School of Physics and Microelectronics, and National Key Laboratory of Crystal Materials, Shandong University, Jinan 250100 |
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| Cite this article: |
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JI Gang, YAN Shi-Shen, CHEN Yan-Xue et al 2006 Chin. Phys. Lett. 23 446-449 |
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Abstract We prepare 2×(NiFe/CoZnO)/ZnO/(CoZnO/Co)×2 spin valve structures used for spin injection by sputtering and photolithography. In the junctions, the free magnetic layer 2×(NiFe/CoZnO) and the fixed magnetic layer (CoZnO/Co)×2 are used to realize the spin valve functions in the external switch magnetic field. Since the wide gap semiconductor ZnO layer is located between the two magnetic semiconductor layers CoZnO, the electrical spin injection from the magnetic semiconductor CoZnO into the non-magnetic semiconductor ZnO is realized. Based on the measured magnetoresistance and the Schmidt model, the spin polarization ratio in the ZnO semiconductor is deduced to be 11.7% at 90K and 7.0% at room temperature, respectively.
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| Keywords:
72.25.Dc
75.47.-m
85.75.-d
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Published: 01 February 2006
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| PACS: |
72.25.Dc
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(Spin polarized transport in semiconductors)
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75.47.-m
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(Magnetotransport phenomena; materials for magnetotransport)
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85.75.-d
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(Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields)
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