Influence of Annealing on Crystal Structure and Properties of SrBi2Ta2O9 Thin Films Prepared by Pulse Laser Deposition

Chin. Phys. Lett.

1996, Vol. 13

Issue (12): 934-936 DOI:

Original Articles

Influence of Annealing on Crystal Structure and Properties of SrBi₂Ta₂O₉ Thin Films Prepared by Pulse Laser Deposition

YANG Ping-xiong;ZHENG Li-rong;WANG Lian-wei;LIN Cheng-lu

State Key Laboratory of Functional Materials for Information, Shanghai Institute of Metallurgy, Chinese Academy of Sciences, Shanghai 200050

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YANG Ping-xiong, ZHENG Li-rong, WANG Lian-wei et al 1996 Chin. Phys. Lett. 13 934-936

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Abstract The perovskite-like SrBi₂Ta₂O₉ (SBT) thin films have been fabricated on Si/SiO₂/Ti/Pt substrate by pulse laser deposition. The crystallization and ferroelectric property were clearly dependent on the annealing time and temperature. The SBT thin film with fine grain size and well-saturated square hysteresis loop was obtained after annealing at 750°C for 90min. Good ferroelectric properties were obtained from the SBT film annealed under this condition; P_r and E_c were 8.4μC/cm² and 57kV/cm, respectively.

Keywords: 77.80.-e 68.35.Fx 42.55.Gp

Published: 01 December 1996

PACS:	77.80.-e	(Ferroelectricity and antiferroelectricity)
	68.35.Fx	(Diffusion; interface formation)
	42.55.Gp

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1996/V13/I12/0934

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	YANG Ping-xiong
	ZHENG Li-rong
	WANG Lian-wei
	LIN Cheng-lu

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