Photocurrent Studies of β-FeSi<suB>2</suB> Thin Films

Chin. Phys. Lett.

1995, Vol. 12

Issue (1): 34-37 DOI:

Original Articles

Photocurrent Studies of β-FeSi₂ Thin Films

SHEN Wenzhong¹;WANG Lianwei²;TANG Wenguo¹;LI Ziyuan¹;SHEN Xuechu¹

¹National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Academia Sinica, Shanghai 200083 ²State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Metallurgy, Academia Sinica, Shanghai 200050

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SHEN Wenzhong, WANG Lianwei, TANG Wenguo et al 1995 Chin. Phys. Lett. 12 34-37

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Abstract We report the observation of photocurrent spectrum involving both the fundamental interband, extrinsic defect transitions β-FeSi₂ and the intrinsic transitions of Si substrate and demonstrate the sensitivity and reliability of the photocurrent measurement for revealing the energy band structure of β-FeSi₂. The transition energies are in good agreement with the results of absorption measurement and the theoretical calculation based on a simple recombination model.

Keywords: 68.55.Eg 78.60.Fi

Published: 01 January 1995

PACS:	68.55.Eg
	78.60.Fi	(Electroluminescence)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1995/V12/I1/034

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	SHEN Wenzhong
	WANG Lianwei
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