| Original Articles |
|
|
|
|
Effect of VI/II Ratio on Structure and Optoelectrical Properties of Zinc Oxide Thin Films Deposited by Metal-Organic Chemical Vapor Deposition |
| MA Yan;DU Guo-Tong;YANG Shu-Ren;YANG Tian-Peng;YANG Hong-Jun;YANG Xiao-Tian;ZHAO Bai-Jun;LIU Da-Li |
| State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130023 |
|
| Cite this article: |
|
MA Yan, DU Guo-Tong, YANG Shu-Ren et al 2003 Chin. Phys. Lett. 20 1155-1157 |
|
|
|
Abstract ZnO thin films with the c-axis orientation on the (0001) sapphire substrate were grown by metal-organic chemical vapor deposition. It was demonstrated that the VI/II precursor flow-rate ratio can influence strongly on the structure and opto-electrical properties. With the increasing VI/II ratio of 130:1, the full width at half maximum of (0002) peak in x-ray diffraction is only 0.184°, the near-band-edge emission enhances remarkably and the intensity ratio of the near-band-edge emission to the deep-level emission reaches 237:1 in the photoluminescence spectrum. At the same time, the resistivity and mobility increases to 3.28 x 102Ω.cm and 25.3cm2V-1s-1. These facts indicates that the quality of the ZnO thin films could be improved by the increase of the VI/II flow rate ratio during the growth.
|
| Keywords:
81.05.Dz
81.15.Gh
78.55.-m
73.61.-r
|
|
|
Published: 01 July 2003
|
|
| PACS: |
81.05.Dz
|
(II-VI semiconductors)
|
| |
81.15.Gh
|
(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
|
| |
78.55.-m
|
(Photoluminescence, properties and materials)
|
| |
73.61.-r
|
(Electrical properties of specific thin films)
|
|
|
|
|
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
