| Original Articles |
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Near-Infrared Femtosecond Laser Induced Defect Formation in
High Purity Silica Below the Optical Breakdown Threshold |
| ZHOU Qin-Ling1,2;LIU Li-Ying2;XU Lei2;WANG Wen-Cheng2;ZHU Cong-Shan3;GAN Fu-Xi1,2 |
| 1Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800
2State Key Laboratory for Advanced Photonic Materials and Devices, Department of Optical Science and Engineering, Fudan University, Shanghai 200433
3Photon Craft Project, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800 |
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| Cite this article: |
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ZHOU Qin-Ling, LIU Li-Ying, XU Lei et al 2003 Chin. Phys. Lett. 20 1763-1766 |
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Abstract Optical absorption, electron spin resonance and photoluminescence spectra were used to study the defect formation in high purity fused silica induced by a focused infrared femtosecond laser with the input intensity below damage threshold. Si E' centres were formed in the silica. The number of Si E' centre was found increasing linearly with power density of the fs laser, deviated from the increment photo-induced free carrier density. We concluded that the colour centres were formed at the defect sites that were newly generated by radiolysis of silica tetrahedral network and displacement of oxygen between two silicon atoms. Material structure is already modified even though the irradiation fs laser power was well below the damage threshold.
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| Keywords:
42.65.Re
42.70.Ce
76.30.Mi
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Published: 01 October 2003
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| PACS: |
42.65.Re
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(Ultrafast processes; optical pulse generation and pulse compression)
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42.70.Ce
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(Glasses, quartz)
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76.30.Mi
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(Color centers and other defects)
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Abstract
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