Picosecond Pulse Laser Microstructuring of Silicon

Chin. Phys. Lett.

2003, Vol. 20

Issue (10): 1789-1791 DOI:

Original Articles

Picosecond Pulse Laser Microstructuring of Silicon

ZHAO Ming;YIN Gang;ZHU Jing-Tao;ZHAO Li

Surface Physics Laboratory, Department of Physics, Fudan University, Shanghai 200433

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ZHAO Ming, YIN Gang, ZHU Jing-Tao et al 2003 Chin. Phys. Lett. 20 1789-1791

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Abstract We report the experimental results of picosecond pulse laser microstructuring (pulse duration 35 ps, wavelength 1.06 μm, repetition rate 10 Hz) of silicon using the direct focusing technique. Arrays of sharp conical spikes located below the initial surface have been formed by cumulative picosecond pulsed laser irradiation of silicon in SF₆. Irradiation of silicon surface in air, N₂, or vacuum creates ripple-like patterns, but does not create the sharp conical spikes.

Keywords: 52.38.Mf 79.20.Ds 81.65.Cf

Published: 01 October 2003

PACS:	52.38.Mf	(Laser ablation)
	79.20.Ds	(Laser-beam impact phenomena)
	81.65.Cf	(Surface cleaning, etching, patterning)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y2003/V20/I10/01789

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