Improvement of 1.3-μm GaInNAs Vertical Cavity Surface Emitting Lasers Grown by MOVPE

Chin. Phys. Lett.

2004, Vol. 21

Issue (1): 81-83 DOI:

Original Articles

Improvement of 1.3-μm GaInNAs Vertical Cavity Surface Emitting Lasers Grown by MOVPE

YUE Ai-Wen^1,2;SHEN Kun²;SHI Jing^1,3;WANG Ren-Fan²

¹Department of Physics, Wuhan University, Wuhan 430072 ²Wuhan Telecommunication Devices Co., Wuhan 430074 ³International Center for Material Physics, Chinese Academy of Sciences, Shenyang 110016

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YUE Ai-Wen, SHEN Kun, SHI Jing et al 2004 Chin. Phys. Lett. 21 81-83

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Abstract We report the improved performance of the conventional contact 1.3 μm GaInNAs vertical cavity surface emitting lasers (VCSELs) grown by metal-organic vapour-phase epitaxy (MOVPE). A new wet etching approach was applied in the fabrication of 1.3 μm GaInNAs oxide-confined VCSELs. The threshold current of single mode device is 1.0 mA. The multiple mode devices show very low threshold currents below 2 mA at 5-85°C, which were the best results for 1.3 μm GaInNAs VCSELs reported. Maximum single mode output power of 0.256 mW and the maximum multiple mode power of 0.883 mW were obtained at room temperature.

Keywords: 42.55.Px

Published: 01 January 2004

PACS:

42.55.Px

(Semiconductor lasers; laser diodes)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y2004/V21/I1/081

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	YUE Ai-Wen
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