| Original Articles |
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Wide-Band Polarisation-Insensitive High-Output-Power Semiconductor Optical Amplifier Based on Thin Tensile-Strained Bulk InGaAs |
| WANG Shu-Rong1,2;LIU Zhi-Hong1;WANG Wei1;ZHU Hong-Liang1;ZHANG Rui-Ying1;ZHOU Fan1;WANG Lu-Feng1;DING Ying1 |
| 1National Research Center of Optoelectronic Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
2Institute of Solar Energy, Yunnan Normal University, Kunming 650092 |
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| Cite this article: |
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WANG Shu-Rong, LIU Zhi-Hong, WANG Wei et al 2004 Chin. Phys. Lett. 21 310-312 |
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Abstract A polarization-insensitive semiconductor optical amplifier (SOA) with a very thin active tensile-strained InGaAs bulk has been fabricated. The polarization sensitivity of the amplifier gain is less than 1 dB over both the entire range of driving current and the 3 dB optical bandwidth of more than 80 nm. For optical signals of 1550 nm wavelength, the SOA exhibits a high saturation output power +7.6 dBm together with a low noise figure of 7.5 dB, fibre-to-fibre gain of 11.5 dB, and low polarization sensitivity of 0.5 dB. Additionally, at the gain peak 1520 nm, the fibre-to-fibre gain is measured to be 14.1 dB.
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| Keywords:
42.55.Px
42.60.Da
42.70.Hj
78.20.-e
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Published: 01 February 2004
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| PACS: |
42.55.Px
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(Semiconductor lasers; laser diodes)
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42.60.Da
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(Resonators, cavities, amplifiers, arrays, and rings)
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42.70.Hj
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(Laser materials)
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78.20.-e
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(Optical properties of bulk materials and thin films)
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