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Surface States in the AlxGa1-xN Barrier in AlxGa1-xN/GaN Heterostructures |
LIU Jie;SHEN Bo;WANG Mao-Jun;ZHOU Yu-Gang;CHEN Dun-Jun;ZHANG Rong;SHI Yi;ZHENG You-Dou |
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093
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Cite this article: |
LIU Jie, SHEN Bo, WANG Mao-Jun et al 2004 Chin. Phys. Lett. 21 170-172 |
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Abstract Frequency-dependent capacitance-voltage (C-V) measurements have been performed on modulation-doped Al0.22Ga0.78N/GaN heterostructures to investigate the characteristics of the surface states in the AlxGa1-xN barrier. Numerical fittings based on the experimental data indicate that there are surface states with high density locating on the AlxGa1-xN barrier. The density of the surface states is about 1012cm-2eV-1, and the time constant is about 1 μs. It is found that an insulating layer (Si3N4) between the metal contact and the surface of AlxGa1-xN can passivate the surface states effectively.
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Keywords:
73.30.+y
81.65.-b
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Published: 01 January 2004
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PACS: |
73.30.+y
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(Surface double layers, Schottky barriers, and work functions)
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81.65.-b
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(Surface treatments)
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