Chin. Phys. Lett.  2004, Vol. 21 Issue (1): 170-172    DOI:
Original Articles |
Surface States in the AlxGa1-xN Barrier in AlxGa1-xN/GaN Heterostructures
LIU Jie;SHEN Bo;WANG Mao-Jun;ZHOU Yu-Gang;CHEN Dun-Jun;ZHANG Rong;SHI Yi;ZHENG You-Dou
National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093
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LIU Jie, SHEN Bo, WANG Mao-Jun et al  2004 Chin. Phys. Lett. 21 170-172
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Abstract Frequency-dependent capacitance-voltage (C-V) measurements have been performed on modulation-doped Al0.22Ga0.78N/GaN heterostructures to investigate the characteristics of the surface states in the AlxGa1-xN barrier. Numerical fittings based on the experimental data indicate that there are surface states with high density locating on the AlxGa1-xN barrier. The density of the surface states is about 1012cm-2eV-1, and the time constant is about 1 μs. It is found that an insulating layer (Si3N4) between the metal contact and the surface of AlxGa1-xN can passivate the surface states effectively.



Keywords: 73.30.+y      81.65.-b     
Published: 01 January 2004
PACS:  73.30.+y (Surface double layers, Schottky barriers, and work functions)  
  81.65.-b (Surface treatments)  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y2004/V21/I1/0170
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LIU Jie
SHEN Bo
WANG Mao-Jun
ZHOU Yu-Gang
CHEN Dun-Jun
ZHANG Rong
SHI Yi
ZHENG You-Dou
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