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Monopole Charge Domain in High-Gain Gallium Arsenide Photoconductive Switches |
| SHI Wei;CHEN Er-Zhu;ZHANG Xian-Bin;LI Qi |
| Department of Applied Physics, Xi’an University of Technology, Xi’an 710048 |
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| Cite this article: |
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SHI Wei, CHEN Er-Zhu, ZHANG Xian-Bin et al 2002 Chin. Phys. Lett. 19 1119-1121 |
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Abstract Considering that the semi-insulating gallium arsenide photoconductive switches can be triggered into the high gain mode and no reliable theories can account for the observed transient characteristics, we propose the monopole charge domain model to explain the peculiar switching phenomena occurring in the high gain mode and discuss the requirements for the lock-on switching. During operation on this mode, the applied field across the switch and the lock-on field are all larger than the Guun threshold field. Our developed monopole charge domain is based on the transferred-electron effect, but the domain is only composed of large numbers of electrons piled up due to the negative differential mobility. Using the model and taking the physical mechanism of the avalanche impact ionization and recombination radiation into consideration, we interpret the typical phenomena of lock-on effect, such as, delay time between the beginning of optical illumination and turning-on of the switch, conduction mechanism of the sustaining phase. Under different conditions of bias field intensity and incident light energy, the delay time of the switching are calculated. The results show that the physical mechanism of impact ionization and recombination radiation occurring in the monopole charge domain is responsible for the lock-on switching.
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| Keywords:
42.65.Re
72.40.+w
71.20.Jv
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Published: 01 August 2002
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| PACS: |
42.65.Re
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(Ultrafast processes; optical pulse generation and pulse compression)
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72.40.+w
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(Photoconduction and photovoltaic effects)
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71.20.Jv
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