| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Modulation of Insulator-Metal Transition Temperature by Visible Light in La7/8Sr1/8MnO3 Thin Film |
HU Ling1, SUN Yu-Ping1,2, WANG Bo1, LUO Xuan1, SHENG Zhi-Gao1, ZHU Xue-Bin1, SONG Wen-Hai1, YANG Zhao-Rong1, DAI Jian-Ming1 |
| 1Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031 2High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031 |
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| Cite this article: |
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HU Ling, SUN Yu-Ping, WANG Bo et al 2010 Chin. Phys. Lett. 27 097504 |
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Abstract Effects of magnetic field and light illumination on the electrical transport properties of La7/8Sr1/8MnO3 thin film grown on a Si substrate are investigated. The film shows an insulator-metal transition at TP≈191.9 K and a low-temperature resistance minimum at Tmin≈48 K in darkness. Both magnetic field and light illumination shift the insulator-metal transition temperature TP to be higher, while the low-temperature transport properties of the film induced by them show different trends. That is, the magnetic field and light illumination make the Tmin shift to lower and higher temperatures, respectively. The enhancement of both TP and Tmin under light illumination could be explained in terms of photoinduced hole-doping and demagnetization effects of La7/8Sr1/8MnO3.
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| Keywords:
75.47.Lx
72.40.+w
73.50.-h
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Received: 22 March 2010
Published: 25 August 2010
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| PACS: |
75.47.Lx
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(Magnetic oxides)
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72.40.+w
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(Photoconduction and photovoltaic effects)
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73.50.-h
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(Electronic transport phenomena in thin films)
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