| FUNDAMENTAL AREAS OF PHENOMENOLOGY(INCLUDING APPLICATIONS) |
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A Two-Stage S-Band Erbium-Doped Fiber Amplifier Based on W-type Erbium-Doped Fiber |
DING Lei1, JIA Yuan-Yuan1, XING Jun-Bo1, ZHANG Zhen1, SUN Jian-Jun2, LU Ke-Cheng1 |
| 1School of Physics, Nankai University, Tianjin 300071 2Research Institute 46 of Chinese Electronic Technology Group Company, Tianjin 300220 |
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| Cite this article: |
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DING Lei, JIA Yuan-Yuan, XING Jun-Bo et al 2010 Chin. Phys. Lett. 27 094204 |
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Abstract An S-band erbium-doped fiber (EDF) amplifier based on a W-type EDF designed by ourselves is demonstrated by employing a two-stage double-pass configuration. The amplifier provides a bandwidth of 34 nm (1486-1520 nm) for the gain over 20 dB. The maximal gain of 32.8 dB is achieved at 1501 nm and the corresponding noise figure is 6.0 dB. The proposed amplifier has a promising foreground in extending the current network to the S band.
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| Keywords:
42.60.Da
42.81.-i
42.81.Uv
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Received: 03 March 2010
Published: 25 August 2010
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