Current-Induced Light Emission from a Laterally Anodizing Porous Silicon Device

Chin. Phys. Lett.

1992, Vol. 9

Issue (10): 555-557 DOI:

Original Articles

Current-Induced Light Emission from a Laterally Anodizing Porous Silicon Device

SHI Hongtao;ZHENG Youdou;WAND Yongbin;YUAN Renkuan

Department of Physics, Nanjing University, Nanjing 210008

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SHI Hongtao, ZHENG Youdou, WAND Yongbin et al 1992 Chin. Phys. Lett. 9 555-557

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Abstract We report the current-induced light emission (CILE) at RT from a porous silicon (PS) Schottky device exhibiting good rectifying characteristics with the ideal factor of 14. The photoluminescence spectrum from the PS layer fabricate by laterally anodization peaks at 668 nm. The intensity of CILE increases with increasing current. It has run for more than two hours and still keeps stable. Possible mechanism of CILE is discussed.

Keywords: 78.20.Dj 78.60.Fi 78.65.Fa

Published: 01 October 1992

PACS:	78.20.Dj
	78.60.Fi	(Electroluminescence)
	78.65.Fa

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1992/V9/I10/0555

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	SHI Hongtao
	ZHENG Youdou
	WAND Yongbin
	YUAN Renkuan

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