Chin. Phys. Lett.  2006, Vol. 23 Issue (8): 2277-2280    DOI:
Original Articles |
Effect of Incident Intensity on Films Growth in Pulsed Laser Deposition
GUAN Li1,2;ZHANG Duan-Ming1;LI Zhi-Hua1;TAN Xin-Yu1;LI Li1;LIU Dan1;FANG Ran-Ran1;LIU Gao-Bin1;HU De-Zhi1
1Department of Physics, Huazhong University of Science and Technology, Wuhan 430074 2College of Physics Science and Technology, Hebei University, Baoding 071002
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GUAN Li, ZHANG Duan-Ming, LI Zhi-Hua et al  2006 Chin. Phys. Lett. 23 2277-2280
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Abstract Incident intensity, defined by the amount of particles deposited per pulse, is an important parameter in the film growth process of pulsed laser deposition (PLD). Different from previous models, we investigate the irreversible and reversible growth processes by using a kinetic Monte Carlo method and find that island density and film morphology strongly depend on pulse intensity. At higher pulse intensities, lots of adatoms instantaneously diffuse on the substrate surface, and then nucleation easily occurs between the moving adatoms resulting in more smaller-size islands. In contrast, at the lower pulse intensities, nucleation event occurs preferentially between the single adatom and existing islands rather than forming new islands, and therefore the average island size becomes larger in this case. Additionally, our results show that substrate temperature plays an important role in film growth. In particular, it can determine the films shape and weaken the effect of pulse intensity on film growth at the lower temperatures by controlling the mobility rate of atoms. Our results can match the related theoretical and experimental results.

Keywords: 81.15.Aa      81.15.Fg      02.70.Uu     
Published: 01 August 2006
PACS:  81.15.Aa (Theory and models of film growth)  
  81.15.Fg (Pulsed laser ablation deposition)  
  02.70.Uu (Applications of Monte Carlo methods)  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y2006/V23/I8/02277
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GUAN Li
ZHANG Duan-Ming
LI Zhi-Hua
TAN Xin-Yu
LI Li
LIU Dan
FANG Ran-Ran
LIU Gao-Bin
HU De-Zhi
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