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Partial Disordering of GaAs/AlGaAs Quantum Well by Rapid Thermal Annealing |
| WANG Jian-hua;YU Guang-rui;JIN Feng;LI De-jie |
| National Integrated Optoelectronics Laboratory, Department of Electronic Engineering, Tsinghua University, Beijing 100084 |
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| Cite this article: |
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WANG Jian-hua, YU Guang-rui, JIN Feng et al 1996 Chin. Phys. Lett. 13 531-533 |
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Abstract The partial disordering of GaAs/AlGaAs quantum well (QW) material has been obtained by rapid thermal annealing with SO2 dielectric capping film. In this case, the absorption edge of QW material was shifted apparently. A laser and a modulator were integrated on a same chip by partial disordering process on the select4d area of QW wafer which was grown by molecular beam epitaxy.
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| Keywords:
61.72.Cc
81.40.Ef
61.50.Ks
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Published: 01 July 1996
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| PACS: |
61.72.Cc
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(Kinetics of defect formation and annealing)
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81.40.Ef
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(Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization)
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61.50.Ks
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(Crystallographic aspects of phase transformations; pressure effects)
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