| Original Articles |
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Photoluminescence Properties of a-SiC:H Films Grown by Plasma Enhanced Chemical Vapor Deposition from SiH4+C2H2 Gas Mixtures |
| LIU Yi-chun1;LIU Chun-guang1;CHEN Da-wei1;LIU Yu-xue1;BAI Yu-bai2;LI Tie-jin2 |
| 1Institute of Theoretical Physics, Northeast Normal University, Changchun 130024
2Department of Chemistry, Jilin University, Changchun 130023
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| Cite this article: |
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LIU Yi-chun, LIU Chun-guang, CHEN Da-wei et al 1998 Chin. Phys. Lett. 15 837-839 |
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Abstract The films of a-SiC:H were deposited by plasma enhanced chemical vapor deposition system from SiH4+ C2H2 gas mixtures. The C-rich a-SiC:H films were easily obtained by using C2H2 gases due to the low dissociation energy of C2H2 molecule in the plasma. Thus, the carbon was effectively incorporated into a-Si:H network. Although the defect state densities were proportional to carbon content in a-SiC:H films, the photoluminescence intensities were not directly related with defect density, yet increased with the carbon content increasing. The infrared spectra indicated that CHn groups as clusters were incorporated mainly into a-SiC:H network. The little correlation of the PL integrated intensity with defect state density suggested that luminescence was associated with clusters as a largely intracluster process.
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| Keywords:
78.55.-m
78.66.-w
61.42.+h
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Published: 01 November 1998
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| PACS: |
78.55.-m
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(Photoluminescence, properties and materials)
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78.66.-w
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(Optical properties of specific thin films)
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61.42.+h
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