Photoluminescence Quenching of Porous Silicon by Molecule Adsorption

Chin. Phys. Lett.

1998, Vol. 15

Issue (10): 756-757 DOI:

Original Articles

Photoluminescence Quenching of Porous Silicon by Molecule Adsorption

LI Xue-ping;YIN Feng;ZHANG Zhen-zong;XIAO Xu-rui

Institute of Photographic Chemistry, Chinese Academy of Sciences, Beijing 100101

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LI Xue-ping, YIN Feng, ZHANG Zhen-zong et al 1998 Chin. Phys. Lett. 15 756-757

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Abstract The photoluminescence of HNO₃ chemically oxidized porous silicon can be easily quenched by organic adsorbates, and the ability of quenching was quantitatively estimated by two models- Langmuir adsorption isotherm and Stern-Volmer. A strong steric effect of organic adsorbates on the photoluminescence quenching of oxidized porous silicon was observed.

Keywords: 78.55.-m 78.50.Ge 68.10.Jy

Published: 01 October 1998

PACS:	78.55.-m	(Photoluminescence, properties and materials)
	78.50.Ge
	68.10.Jy

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1998/V15/I10/0756

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