Atomic Force Microscopy on the Ga0.l6In0.84As0.80Sb0.20Epilayer Grown by Metalorganic Chemical Vapor Deposition

Chin. Phys. Lett.

1998, Vol. 15

Issue (10): 724-726 DOI:

Original Articles

Atomic Force Microscopy on the Ga_0.l6In_0.84As_0.80Sb_0.20Epilayer Grown by Metalorganic Chemical Vapor Deposition

GAO Chun-xiao¹;LI Shu-wei²;YANG Jie¹;LIU Bing-bing¹

¹State Key Laboratory for Superhard Materials, Jilin University, Changchun 130023 ²Changchun Institute of Physics, Chinese Academy of Sciences, Changchun 130021

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GAO Chun-xiao, LI Shu-wei, YANG Jie et al 1998 Chin. Phys. Lett. 15 724-726

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Abstract The atomic force microscopy study was made on the quaternary Ga_0.l6In_0.84As_0.80Sb_0.20 epilayer prepared on GaSb substrate by metalorganic chemical vapor deposition. The island-like defects were found on the substrate surface pretreated chemically. With the growth process going, these island-like defects could be buried by the epilayer. In the initial stage, two-dimensional-growth-mode was followed. When the epilayer thickness reached 70nm, three-dimensional (3D)-growth-mode occurred and the perfect 3D islands were observed.

Keywords: 61.16.Ch 68.55.Jk 68.55.Gh

Published: 01 October 1998

PACS:	61.16.Ch
	68.55.Jk
	68.55.Gh

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y1998/V15/I10/0724

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	GAO Chun-xiao
	LI Shu-wei
	YANG Jie
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