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A New Method for Thin Film Deposition-Faced Microwave Electron Cyclotron Resonance Plasma Sources Enhanced Direct-Current Magnetron Sputtering |
| XU Jun;MA Teng-Cai;LU Wen-Qi,XIA Yuan-Liang;DENG Xin-Lu |
| State Key Laboratory for Materials Modification by Laser, Ion, and Electron Beams, Department of Physics, Dalian University of Technology, Dalian 116024 |
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| Cite this article: |
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XU Jun, MA Teng-Cai, LU Wen-Qi et al 2000 Chin. Phys. Lett. 17 586-588 |
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Abstract A new reactive magnetron sputtering system enhanced by the faced microwave electron cyclotron resonance plasma source was designed and amorphous CNx films has been prepared by using this system. The characterization of the films by interference microscopy, atomic force microscopy, and x-ray photoelectron spectroscopy shows that the deposition rate is strongly affected by the direct-current bias, and the films are composed by a single carbon nitride phase and the N/C ratio is 4:3.2, which is close to that of C3N4 (4:3).
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| Keywords:
52.75.Rx
81.15.Cd
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Published: 01 August 2000
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