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STUDY ON PERTURBATION LAYER OF SILICON WITH "MIRAGE EFFECT" TECHNIQUE |
| ZHANG Xiaorong;GAN Changming;LI Youzhi;GUAN Susheng;TAN Ruiling* |
| Department of Information Physics, Nanjing University, Nanjing
*Jiangsu Institute of Chemical Technology, Nanjing |
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| Cite this article: |
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ZHANG Xiaorong, GAN Changming, LI Youzhi et al 1987 Chin. Phys. Lett. 4 213-216 |
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Abstract The relative changes of thermal diffusivity lengths in ion-implanted and unimplanted silicon wafers were studied with "mirage effect", i. e. OBD techique. The fundamental principle, experimental results and feasible explanation are presented.
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Published: 01 May 1987
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