| Original Articles |
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In Situ Rutherford Backscattering Spectrometry Analysis of Films by Combination with Sputter Etching |
| JIANG Lei;LIU Bo;ZHOU Zhu-ying;HE Mian-hong;ZHAO Guo-qing;ZONG Xiang-fu1 |
| Accelerator-based Atomic and Nuclear Physics Laboratory, Institute of Modern Physics, fudan University, Shanghai 200433
1National Micro-analysis Center for Microelectronic Materials and Devices, Department of Material Science, fudan University, Shanghai 200433
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| Cite this article: |
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JIANG Lei, LIU Bo, ZHOU Zhu-ying et al 1999 Chin. Phys. Lett. 16 770-772 |
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Abstract We have set up an experimental system consisting of an ion gun and a Rutherford backscattering spectrometry(RBS) analysis chamber. Using this system, in situ 2MeV 4He+ RBS analysis of films is carried out by combination with sputter etching of low energy Ar+ ions. As an example of the sputtering/RBS method, the analysis of three samples, i.e., Si/(GexSi1-x/Si)/Si(100), WSix/SiO2/Si and CoSix/Si, is presented in this paper. After an appropriate fraction of the thick layer is removed by sputtering, the back edge of the Ge peak is separated from Si RBS spectrum on the interface and the O peak of the buried SiO2 layer can be identified. The change of the doped Ti and W concentrations related to Co on the top surface is observed. The advantages of this analytical method and its possible applications in film are discussed.
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| Keywords:
79.20.Rf
68.55.Jk
61.80.Jh
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Published: 01 October 1999
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| PACS: |
79.20.Rf
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(Atomic, molecular, and ion beam impact and interactions with surfaces)
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68.55.Jk
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61.80.Jh
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(Ion radiation effects)
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