| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Magnetic Proximity Effect in an Antiferromagnetic Insulator/Topological Insulator Heterostructure with Sharp Interface |
| Yuxin Liu1,2, Xuefan Niu1,2, Rencong Zhang1,2, Qinghua Zhang1,2, Jing Teng1,2*, and Yongqing Li1,2* |
1Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
2School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
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| Cite this article: |
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Yuxin Liu, Xuefan Niu, Rencong Zhang et al 2021 Chin. Phys. Lett. 38 057303 |
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Abstract We report an experimental study of electron transport properties of MnSe/(Bi,Sb)$_{2}$Te$_{3}$ heterostructures, in which MnSe is an antiferromagnetic insulator, and (Bi,Sb)$_{2}$Te$_{3}$ is a three-dimensional topological insulator (TI). Strong magnetic proximity effect is manifested in the measurements of the Hall effect and longitudinal resistances. Our analysis shows that the gate voltage can substantially modify the anomalous Hall conductance, which exceeds 0.1 $e^{2}/h$ at temperature $T = 1.6$ K and magnetic field $\mu_{0}H = 5$ T, even though only the top TI surface is in proximity to MnSe. This work suggests that heterostructures based on antiferromagnetic insulators provide a promising platform for investigating a wide range of topological spintronic phenomena.
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Received: 25 January 2021
Published: 02 May 2021
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| Fund: Supported by the National Key Research and Development Program of China (Grant No. 2016YFA0300600), the National Natural Science Foundation of China (Grant No. 11961141011), and the Strategic Priority Research Program of Chinese Academy of Sciences (Grant No. XDB28000000). |
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