InGaN-Based Blue Light Emitting Diodes with AlInN-GaN-AlInN Electron Blocking Layers
TONG Jin-Hui, ZHAO Bi-Jun, REN Zhi-Wei, WANG Xing-Fu, CHEN Xin, LI Shu-Ti*
Laboratory of Nanophotonic Functional Materials and Devices, Institute of Opto-Electronic Materials and Technology, South China Normal University, Guangzhou 510631
Abstract：A three-layer p-type Al0.82In0.18N–GaN–Al0.82In0.18N electron blocking layer (EBL) is designed to replace the original p-type AlGaN EBL in blue light emitting diodes (LEDs). The fabricated LEDs with Al0.82In0.18N–GaN–Al0.82In0.18N EBLs exhibit enhanced light output power and an alleviated efficiency drop compared to the original EBL. The improved performance is attributed to more effective electron confinement by this specially designed EBL and improved crystalline quality in the InGaN/GaN active region.
2013, Vol. 30 
