InAlN/AlN/GaN Field-Plated MIS-HEMTs with a Plasma-Enhanced Chemical Vapor Deposition SiN Gate Dielectric
MAO Wei1**, HAO Yue1, YANG Cui2, ZHANG Jin-Cheng1, MA Xiao-Hua2, WANG Chong1, LIU Hong-Xia1, YANG Lin-An1, ZHANG Jin-Feng1, ZHENG Xue-Feng1, ZHANG Kai1, CHEN Yong-He1, YANG Li-Yuan1
1Key Lab of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071 2School of Technical Physics, Xidian University, Xi'an 710071
Abstract：We report the studies of In0.15Al0.85N/AlN/GaN metal-insulator-semiconductor (MIS) high electron mobility transistors with a field plate (FP) and a plasma-enhanced chemical vapor deposition (PECVD) SiN layer as the gate dielectric as well as the surface passivation layer (FP-MIS HEMTs). Compared with conventional In0.15Al0.85N/AlN/GaN high electron mobility transistors (HEMTs) of the same dimensions, the FP-MIS HEMTs exhibit a maximum drain current of 1211 mA/mm, a breakdown voltage of 120 V, an effective suppression of current collapse, about one order of magnitude reduction in reverse gate leakage, as well as more than five orders of magnitude reduction in forward gate leakage. These results confirm the potential of PECVD SiN in the application of the InAlN/AlN/GaN FP-MIS HEMTs.
. [J]. 中国物理快报, 2013, 30(5): 58502-058502.
MAO Wei, HAO Yue, YANG Cui, ZHANG Jin-Cheng, MA Xiao-Hua, WANG Chong, LIU Hong-Xia, YANG Lin-An, ZHANG Jin-Feng, ZHENG Xue-Feng, ZHANG Kai, CHEN Yong-He, YANG Li-Yuan . InAlN/AlN/GaN Field-Plated MIS-HEMTs with a Plasma-Enhanced Chemical Vapor Deposition SiN Gate Dielectric. Chin. Phys. Lett., 2013, 30(5): 58502-058502.
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2013, Vol. 30 
