中国物理快报  2013, Vol. 30 Issue (5): 58502-058502    DOI: 10.1088/0256-307X/30/5/058502
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InAlN/AlN/GaN Field-Plated MIS-HEMTs with a Plasma-Enhanced Chemical Vapor Deposition SiN Gate Dielectric
MAO Wei1**, HAO Yue1, YANG Cui2, ZHANG Jin-Cheng1, MA Xiao-Hua2, WANG Chong1, LIU Hong-Xia1, YANG Lin-An1, ZHANG Jin-Feng1, ZHENG Xue-Feng1, ZHANG Kai1, CHEN Yong-He1, YANG Li-Yuan1
1Key Lab of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071
2School of Technical Physics, Xidian University, Xi'an 710071