The High Quantum Efficiency of Exponential-Doping AlGaAs/GaAs Photocathodes Grown by Metalorganic Chemical Vapor Deposition
ZHANG Yi-Jun1** , ZHAO Jing1 , ZOU Ji-Jun1,2 , NIU Jun1 , CHEN Xin-Long1 , CHANG Ben-Kang1
1 Institute of Electronic Engineering and Optoelectronic Technology, Nanjing University of Science and Technology, Nanjing 2100942 Engineering Research Center of Nuclear Technology Application (Ministry of Education), East China Institute of Technology, Nanchang 330013
Abstract ：An exponential-doping structure is successfully applied to the preparation of AlGaAs/GaAs photocathodes through the metalorganic chemical vapor deposition (MOCVD) technique. The experimental results show that the quantum efficiency in the entire waveband region for the exponential-doping photocathodes grown by MOCVD is remarkably enhanced as compared to those grown by molecular beam epitaxy. As a result of the improved built-in electric fields and cathode performance parameters, the photoemission characteristics for the MOCVD-grown transmission-mode and reflection-mode AlGaAs/GaAs photocathodes are different over the wavelength region of interest.
收稿日期: 2012-11-05
出版日期: 2013-04-28
:
42.70.Gi
(Light-sensitive materials)
71.55.Eq
(III-V semiconductors)
72.10.-d
(Theory of electronic transport; scattering mechanisms)
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